View APT150GN60LDQ4_4693826.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

600V
APT150GN60LDQ4(G)
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.
* 600V Field Stop
* Trench Gate: Low VCE(on) * Easy Paralleling * Intergrated Gate Resistor: Low EMI, High Reliability
APT150GN60LDQ4(G)
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
2 1
All Ratings: TC = 25C unless otherwise specified.
APT150GN60LDQ4(G) UNIT Volts
600 30 220 123 450 450A @ 600V 536 -55 to 175 300
Amps
Switching Safe Operating Area @ TJ = 175C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) Gate Threshold Voltage (VCE = VGE, I C = 2400A, Tj = 25C) MIN TYP MAX Units
600 5.0 1.05 5.8 1.45 1.65 75
3
6.5 1.85
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 150A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 150A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
3
I CES I GES RG(int)
A nA
10-2008 050-7633 Rev A
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V) Intergrated Gate Resistor
2000 600 2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
Typical Performance Curves
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
4
APT150GN60LDQ4(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 150A TJ = 175C, R G = 4.3 8, VGE = 15V, L = 100H,VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V I C = 150A
5 6
MIN
TYP
MAX
UNIT
9200 350 300 9.5 970 65 510 450 44 110 430 60 8810 8615 4295 44 110 480 95 8880 9735 5460 J
ns ns A nC V pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
54 65
RG = 1.0 8 TJ = +25C
Turn-on Switching Energy (Diode)
7
J
Inductive Switching (125C) VCC = 400V VGE = 15V I C = 150A RG = 1.0 8 TJ = +125C
Turn-on Switching Energy (Diode)
67
THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions
R R
JC JC
Min
2500 -
Typ
-
Max
0.28 .30
Unit
C/W
Junction to Case (IGBT) Junction to Case (DIODE) RMS Voltage (50-60Hz Sinsoidal Waveform from Terminals to Mounting Base for 1 Min.) Package Weight
VIsolation WT
6.1
-
gm
1
Continuous current limited by case temperature.
2 Repetitive Rating: Pulse width limited by maximum junction temperature. 3 For Combi devices, Ices includes both IGBT and FRED leakages 4 See MIL-STD-750 Method 3471.
10-2008 Rev A 050-7633
5 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 6 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 7 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 8 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
Typical Performance Curves
350 300 TJ = 25C 250 TJ = 125C 200 TJ = 175C 150 100 50 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE V
GE
APT150GN60LDQ4(G)
400 12, 13 &15V 11V
= 15V
TJ = -55C IC, COLLECTOR CURRENT (A)
350 300 250 200 150 100 50 0
IC, COLLECTOR CURRENT (A)
10V
9V 8V 7V
0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25C) 350 300 250 200 150 100 50 0 0 2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
FIGURE 2, Output Characteristics (TJ = 125C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 14 12 10 8 6 4 2 0 0 200 400 600 800 1000 GATE CHARGE (nC) FIGURE 4, Gate Charge VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 3.0 2.5 2.0 IC = 150A 1.5 1.0 0.5 0 IC = 75A 1200
I = 150A C T = 25C
J
IC, COLLECTOR CURRENT (A)
TJ = -55C TJ = 25C TJ = 125C TJ = 175C
VCE = 120V VCE = 300V VCE = 480V
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 IC = 300A
IC = 300A
IC = 150A IC = 75A
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.15
0
8
25 50 75 100 125 150 175 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 300
0
IC, DC COLLECTOR CURRENT(A)
1.10 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.05 1.00 0.95 0.90 0.85 0.80 0.75
250 200 150 10-2008 050-7633 Rev A 100 50 0 -50 -25
0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature
0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
Typical Performance Curves
60 50 VGE = 15V 40 30 20 10 T = 25C, or 125C J 30 70 110 150 190 230 270 310 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 400 350 300 tr, RISE TIME (ns) 250 200 150 100 50 30 70 110 150 190 230 270 310 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 40,000 EON2, TURN ON ENERGY LOSS (J) 35,000 30,000 25,000 20,000 15,000 10,000 5,000 0
TJ = 25C TJ = 125C
V = 400V CE V = +15V GE R = 1.0
G
APT150GN60LDQ4(G)
600 td (OFF), TURN-OFF DELAY TIME (ns) 500 400
VGE =15V,TJ=125C
td(ON), TURN-ON DELAY TIME (ns)
300 200 100 VCE = 400V RG = 1.0
VGE =15V,TJ=25C
VCE = 400V RG = 1.0 L = 100H
0
30 70 110 150 190 230 270 310 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 180 160 140 tf, FALL TIME (ns)
TJ = 125C, VGE = 15V
0
L = 100H
RG = 1.0, L = 100H, VCE = 400V
TJ = 25 or 125C,VGE = 15V
120 100 80 60 40 20 0
TJ = 25C, VGE = 15V
0
RG = 1.0, L = 100H, VCE = 400V
30 70 110 150 190 230 270 310 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 18,000 EOFF, TURN OFF ENERGY LOSS (J) 16,000 14,000 12,000 10,000 8,000 6,000 4,000 2,000 0
TJ = 25C TJ = 125C
V = 400V CE V = +15V GE R = 1.0
G
30 70 110 150 190 230 270 310 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 70,000 SWITCHING ENERGY LOSSES (J) 60,000 50,000 40,000 30,000 20,000 10,000 0 0
Eoff,300A Eon2,150A Eon2,75A Eoff,75A Eoff,150A
V = 400V CE V = +15V GE T = 125C
J
30 70 110 150 190 230 270 310 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 40,000 SWITCHING ENERGY LOSSES (J) 35,000 30,000 25,000 20,000 15,000 10,000 5,000 0 0
Eoff,150A Eoff,75A Eon2,150A
V = 400V CE V = +15V GE R = 1.0
G
Eon2,300A
Eon2,300A
Eoff,300A
10-2008
Rev A
Eon2,75A
050-7633
5 10 15 20 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
Typical Performance Curves
20,000 10,000 C, CAPACITANCE ( F) 500 Cies IC, COLLECTOR CURRENT (A) 500
APT150GN60LDQ4(G)
400
P
300
100 50 Coes Cres 10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
200
100
100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0
0.30 D = 0.9
ZJC, THERMAL IMPEDANCE (C/W)
0.25
0.20
0.7
0.15
0.5
Note:
0.3
PDM
0.10
t1 t2
0.05 0
0.1 0.05 10-5 10-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
50 FMAX, OPERATING FREQUENCY (kHz)
RC MODEL Junction temp. (C) 0.0964 Power (watts) 0.184 Case temperature. (C) 0.300 0.00770
10
5
T = 125C J T = 75C C D = 50 % = 400V V CE R = 1.0
G
F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf f max2 = Pdiss = Pdiss - P cond E on2 + E off TJ - T C R JC
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
70 90 110 130 150 170 190 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
1
30
50
050-7633
Rev A
10-2008
APT150GN60LDQ4(G)
APT100DQ60
10% td(on) tr
Gate Voltage TJ = 125C
Collector Current 90%
V CC
IC
V CE
5%
10%
5% Collector Voltage
A
Switching Energy
D.U.T.
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90% Gate Voltage td(off) 90% Collector Voltage 10%
TJ = 125C
tf
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
050-7633
Rev A
10-2008
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol Characteristic / Test Conditions Maximum Average Forward Current (TC = 103C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 120A VF Forward Voltage IF = 240A IF = 120A, TJ = 125C MIN
All Ratings: TC = 25C unless otherwise specified.
APT150GN60LDQ4(G) UNIT
120 188 600
TYP MAX UNIT Amps
STATIC ELECTRICAL CHARACTERISTICS 2.00 2.44 1.70
Volts
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
0.35 Z JC, THERMAL IMPEDANCE (C/W) 0.30 D = 0.9 0.25 0.7 0.20 0.15 0.10 0.05 0 0.5
Note:
Test Conditions IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C IF = 120A, diF/dt = -200A/s VR = 400V, TC = 25C
MIN -
TYP 34
MAX
UNIT ns
IF = 120A, diF/dt = -200A/s VR = 400V, TC = 125C
47.3 113 4 143 923 11 99 2631 45 nC Amps ns nC Amps ns nC Amps
-
IF = 120A, diF/dt = -1000A/s VR = 400V, TC = 125C
-
PDM
t1 t2
0.3
0.1 0.05 10-5 10-4 SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
1.0 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TJ (C)
TC (C)
Dissipated Power (Watts)
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
050-7633
Rev A
.01168
.13207
ZEXT
.1174
.1924
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
10-2008
DYNAMIC CHARACTERISTICS
300 trr, REVERSE RECOVERY TIME (ns) TJ = 25C 300
T =125C J V =400V
R
APT150GN60LDQ4(G)
250 IF, FORWARD CURRENT (A)
250
200A 100A 50A
200 TJ = 175C 150 TJ = 125C 100
200
150
100
50 TJ = -55C 0 0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage
T =125C J V =400V
R
50 0
0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 26. Reverse Recovery Time vs. Current Rate of Change 60 IRRM, REVERSE RECOVERY CURRENT (A)
T =125C J V =400V
R
4000 Qrr, REVERSE RECOVERY CHARGE (nC) 3500 3000 2500 2000 50A 1500 1000 500 0 100A
200A
200A
50
40 100A
30 50A
20
10 0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 27. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) Qrr trr trr IRRM 0.6 Qrr
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Current vs. Current Rate of Change 180 160 140
Duty cycle = 0.5 T =175C
J
1.0
0.8
120 IF(AV) (A) 100 80 60 40
0.4
0.2 20 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 29. Dynamic Parameters vs. Junction Temperature 1400 CJ, JUNCTION CAPACITANCE (pF) 1200 1000 800 600 400 200 0 0.0 0 75 100 125 150 175 Case Temperature (C) Figure 30. Maximum Average Forward Current vs. CaseTemperature 0 25 50
Rev A
10-2008
050-7633
10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage
1
APT150GN60LDQ4(G)
Vr +18V 0V D.U.T. 30H
trr/Qrr Waveform
diF /dt Adjust
PEARSON 2878 CURRENT TRANSFORMER
Figure 32. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
0.25 IRRM
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
TO-264 (L) Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
Collector
Cathode
25.48 (1.003) 26.49 (1.043)
2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
Gate Collector / Cathode Emitter / Anode
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs.
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7633
Rev A
10-2008
Dimensions in Millimeters and (Inches)

▲Up To Search▲

Price & Availability of APT150GN60LDQ4

	To Download APT150GN60LDQ4 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .